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| DISCRETE SEMICONDUCTORS DATA SHEET BFS17A NPN 3 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September1995 Philips Semiconductors Product specification NPN 3 GHz wideband transistor DESCRIPTION NPN transistor in a plastic SOT23 package. handbook, halfpage BFS17A 3 APPLICATIONS * It is intended for RF applications such as oscillators in TV tuners. 1 2 MSB003 PINNING PIN 1 2 3 base emitter collector DESCRIPTION Marking code: E2p. Top view Fig.1 SOT23. QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot fT GUM F VO PARAMETER collector-base voltage collector-emitter voltage DC collector current total power dissipation transition frequency maximum unilateral power gain noise figure output voltage up to Ts = 70 C; note 1 IC = 25 mA; VCE = 5 V; f = 500 MHz; Tamb = 25 C IC = 14 mA; VCE = 10 V; f = 800 MHz IC = 2 mA; VCE = 5 V; f = 800 MHz; Tamb = 25 C dim = -60 dB; IC = 14 mA; VCE = 10 V; RL = 75 ; Tamb = 25 C; f(p+q-r) = 793.25 MHz open base CONDITIONS open emitter - - - - 2.8 13.5 2.5 150 TYP. MAX. 25 15 25 300 - - - - V V mA mW GHz dB dB mV UNIT LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM Ptot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage DC collector current peak collector current total power dissipation storage temperature junction temperature up to Ts = 70 C; note 1 open base open collector CONDITIONS open emitter - - - - - - -65 - MIN. MAX. 25 15 2.5 25 50 300 +150 150 V V V mA mA mW C C UNIT Note to the Quick reference data and the Limiting values 1. Ts is the temperature at the soldering point of the collector pin. September1995 2 Philips Semiconductors Product specification NPN 3 GHz wideband transistor THERMAL CHARACTERISTICS SYMBOL Rth j-s Note 1. Ts is the temperature at the soldering point of the collector pin. CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL ICBO hFE fT Cc Ce Cre GUM F VO Notes PARAMETER collector cut-off current DC current gain transition frequency collector capacitance emitter capacitance feedback capacitance maximum unilateral power gain note 1 noise figure output voltage CONDITIONS IE = 0; VCB = 10 V IC = 2 mA; VCE = 1 V; Tamb = 25 C IC = 25 mA; VCE = 1 V; Tamb = 25 C IC = 25 mA; VCE = 5 V; f = 500 MHz; Tamb = 25 C IE = 0; VCB = 10 V; f = 1 MHz; Tamb = 25 C IC = 0; VEB = 0.5 V; f = 1 MHz IC = 0; VCE = 5 V; f = 1 MHz IC = 14 mA; VCE = 10 V; f = 800 MHz IC = 2 mA; VCE = 5 V; ZS = 60 ; f = 800 MHz; Tamb = 25 C note 2 MIN. - 25 25 - - - - - - - TYP. - 90 90 2.8 0.7 1.25 0.6 13.5 2.5 150 PARAMETER thermal resistance from junction to soldering point CONDITIONS up to Ts = 70 C; note 1 VALUE 260 BFS17A UNIT K/W MAX. 50 - - - - - - - - - UNIT nA GHz pF pF pF dB dB mV S 21 1. GUM is the maximum unilateral power gain, assuming S12 is zero and G UM = 10 log ------------------------------------------------------------- dB. 2 2 1 - S 11 1 - S 22 2. dim = -60 dB (DIN 45004B); IC = 14 mA; VCE = 10 V; RL = 75 ; Tamb = 25 C; Vp = VO; fp = 795.25 MHz; Vq = VO -6 dB; fq = 803.25 MHz; Vr = VO -6 dB; fr = 805.25 MHz; measured at f(p+q-r) = 793.25 MHz. 2 September1995 3 Philips Semiconductors Product specification NPN 3 GHz wideband transistor BFS17A handbook, full pagewidth 1.5 nF 1.5 nF VBB 10 k L2 L3 1 nF 1 nF L1 1 nF 270 DUT 75 output VCC 75 input 3.3 pF 18 0.68 pF MBB251 L1 = L3 = 5 H Ferroxcube choke. L2 = 3 turns 0.4 mm copper wire; winding pitch 1 mm; internal diameter 3 mm. Fig.2 Intermodulation distortion and second order intermodulation distortion test circuit. handbook, halfpage 100 MEA395 handbook, halfpage 1 MEA903 hFE Cc (pF) 50 0.5 0 0 10 20 IC (mA) 30 0 0 4 8 12 VCB (V) 16 VCE = 1 V; Tamb = 25 C. IE = 0; f = 1 MHz; Tamb = 25 C. Fig.3 DC current gain as a function of collector current. Fig.4 Collector capacitance as a function of collector-base voltage. September1995 4 Philips Semiconductors Product specification NPN 3 GHz wideband transistor BFS17A handbook, halfpage 4 MEA904 handbook, halfpage 5 MEA902 fT (GHz) 3 F (dB) 4 3 2 2 1 1 0 0 20 IC (mA) 40 0 0 10 IC (mA) 20 VCE = 5 V; f = 500 MHz; Tamb = 25 C. VCE = 5 V; Zs = 60 ; f = 800 MHz; Tamb = 25 C. Fig.5 Transition frequency as a function of collector current. Fig.6 Minimum noise figure as a function of collector current. September1995 5 Philips Semiconductors Product specification NPN 3 GHz wideband transistor PACKAGE OUTLINE BFS17A handbook, full pagewidth 3.0 2.8 0.150 0.090 1.9 0.95 2 0.1 max 10 o max 3 1.1 max 30 o max 0.48 0.38 TOP VIEW 0.1 M A B 1 B A 0.2 M A 0.55 0.45 10 o max 1.4 1.2 2.5 max MBC846 Dimensions in mm. Fig.7 SOT23. DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. September1995 6 |
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